Datasheet > 2SA1515S_10

2SA1515S_10

更新时间： 2024-11-20 07:29:43

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	144K
描述
Medium Power Transistor (-32V,-1A)

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中文翻译

获取价格

数据手册

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2SA1515S_10 数据手册

Medium Power Transistor (32V,1A)

2SA1515S / 2SB1237

Features

Dimensions (Unit : mm)

1) Low V^CE(sat).

2SA1515S

2SB1237

−

2.5 0.2

V^CE(sat)= 0.2V(Typ.)

(I^C/ IB = 500mA / 50mA)

2) Compliments 2SD1858

2 0.2

−

0.2

6.8 0.2

−

+0.15

−0.05

Structure

0.45

0.65Max.

Epitaxial planar type

PNP silicon transistor

0.5 0.1

−

+0.15

−0.05

+0.4

0.45

2.5

0.5

−0.1

(1) (2)

(3)

2.54

0.45 0.1

−

1.05

(1) (2) (3)

(1) Emitter

(2) Collector

(3) Base

(1) Emitter

(2) Collector

(3) Base

ROHM : SPT

EIAJ : SC-72

ROHM : ATV

Absolute maximum ratings (Ta=25C)

Parameter

Symbol

Limits

−40

−32

−5

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

VCBO

VCEO

VEBO

−1

A(DC)

A(Pulse)

Collector current

−2

∗

2SA1515S

0.3

Collector power

dissipation

2SB1237

∗

Junction temperature

Storage temperature

1 Single pulse, Pw=100ms

150

Tstg

−55 to +150

∗

2 Printed circuit board, 1.7 mm thick, collector copper plating 100mm²or larger.

Electrical characteristics (Ta=25C)

Parameter

Symbol Min.

Typ.

−

Max.

−

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BVCEO

BVEBO

−40

−32

−5

−

= −50μA

−

C= −1mA

−

= −50μA

CB= −20V

EB= −4V

CBO

EBO

CE(sat)

−

−0.5

390

−

μA

Emitter cutoff current

−

Collector-emitter saturation voltage

DC current transfer ratio

−

−0.2

−

C/I

= −500mA/

−

50mA

= −0.1A

50mA, f

0A, f 1MHz

∗

120

−

CE= −3V, I

Transition frequency

150

MHz

CE= −5V, I

30MHz

Output capacitance

Cob

−

CB= −10V, I

Measured using pulse current.

∗

www.rohm.com

2010.04 - Rev.D

1/3

12 3 4

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