2SA1516O

更新时间： 2024-01-11 21:39:02

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	110K
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2SA1516O 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

2SA1516

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -180V(Min)

·Good Linearity of h_FE

·Complement to Type 2SC3907

APPLICATIONS

·Power amplifier applications

·Recommend for 80W high fidelity audio frequency

amplifier output stage applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

-180

-5

UNIT

Collector Current-Continuous

Base Current-Continuous

-12

I_B

-1.2

Collector Power Dissipation

@ T_C=25℃

P_C

130

℃

T_J

Junction Temperature

150

Storage Temperature Range

-55~150

T_stg

isc Website：www.iscsemi.cn

中文翻译

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