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2SA1419 PDF预览

2SA1419

更新时间: 2024-11-20 07:29:39
品牌 Logo 应用领域
科信 - KEXIN 晶体开关晶体管高压
页数 文件大小 规格书
3页 512K
描述
High-Voltage Switching Applications

2SA1419 数据手册

 浏览型号2SA1419的Datasheet PDF文件第2页浏览型号2SA1419的Datasheet PDF文件第3页 
SMD Type  
Transistors  
High-Voltage Switching Applications  
2SA1419  
Features  
Adoption of FBET, MBIT Processes  
High Breakdown Voltage and Large Current Capacity  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-180  
Unit  
V
-160  
V
-6  
V
Collector Current  
-1.5  
A
Collector Current (Pulse)  
ICP  
-2.5  
A
PC  
500  
mW  
W
Collector Power Dissipation  
PC *  
Tj  
1.5  
Jumction temperature  
150  
Storage temperature Range  
Tstg  
-55 to +150  
* Mounted on ceramic board (250 mm2 x 0.8 mm)  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
ICBO  
IEBO  
Testconditons  
Min  
Typ  
Max  
-1  
Unit  
uA  
uA  
V
Collector Cut-off Current  
VCB = -120V , IE = 0  
VEB = -4V , IC = 0  
Emitter Cut-off Current  
-1  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
V(BR)CBO IC = -10uA , IE = 0  
V(BR)CEO  
-180  
-160  
-6  
V
IC = -1mA , RBE =  
V(BR)EBO IE = -10uA , IC = 0  
VCE = -5V , IC = -100mA  
VCE = -5V , IC = -10mA  
V
100  
80  
400  
-0.5  
DC Current Gain  
hFE  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Gain-Bandwidth Product  
VCE(sat) IC = -500mA , IB = -50mA  
VBE(sat) IC = -500mA , IB = -50mA  
-0.2  
V
V
-0.85 -1.2  
fT  
VCE = -10V , IC = -50mA  
120  
22  
MHz  
pF  
ns  
Collector Output Capacitance  
Cob  
VCB = -10V , IE = 0 , f = 1MHz  
Turn-On Time  
Storage Time  
Fall Time  
ton  
tstg  
tf  
40  
0.7  
40  
See Test Circuit.  
us  
ns  
1
www.kexin.com.cn  

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