SMD Type
Transistors
PNP Transistors
2SA1419-HF
1.70 0.1
Features
Adoption of FBET, MBIT Processes
High Breakdown Voltage and Large Current Capacity
● Complementary to 2SC3649-HF
0.42 0.1
0.46 0.1
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
-180
-160
-6
V
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulsed
Collector Power Dissipation
Junction Temperature
I
C
-1.5
A
mW
℃
I
CP
-2.5
P
C
500
T
J
150
Storage Temperature range
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
-180
-160
-6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100 μA, I
Ic= -1 mA, RBE=∞
= -100μA, I =0
CB= -120 V , I =0
EB= -4V , I =0
E=0
I
E
C
I
CBO
EBO
V
V
E
-1
-1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=-500mA, I
B
B
=- 25mA
=- 25mA
-0.2
-0.5
V
C
=-500mA, I
-0.85 -1.2
400
V
V
CE= -5V, I
CE= -5V, I
C
= -100mA
= -10mA
100
80
DC current gain
hFE
C
Turn-on time
t
on
40
700
40
See Test Circuit.
ns
Storage time
ts
Fall time
tf
Output capacitance
Transition frequency
C
ob
T
V
V
CB= -10V, I
CE= -10V, I
E
E
= 0,f=1MHz
= -50mA
22
pF
f
120
MHz
■ Classification of hfe
Type
Range
Marking
2SA1419-R-HF 2SA1419-S-HF 2SA1419-T-HF
100-200 140-280 200-400
AER* AES* AET*
F
F
F
1
www.kexin.com.cn