Ordering number : EN2007B
2SA1419 / 2SC3649
SANYO Sem iconductors
DATA S HEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1419 / 2SC3649
High-Voltage Switching Applications
Features
•
Adoption of FBET, MBIT processes.
•
High breakdown voltage and large current capacity.
•
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications ( ) : 2SA1419
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
V
V
(--)180
(--)160
(--)6
CBO
CEO
EBO
V
V
I
(--)1.5
(--)2.5
500
A
C
Collector Current (Pulse)
I
A
CP
mW
W
°C
°C
Collector Dissipation
P
C
Mounted on a ceramic board (250mm2✕0.8mm)
1.5
Junction Temperature
Storage Temperature
Marking 2SA1419 : AE
2SC3649 : CE
Tj
150
Tstg
--55 to +150
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
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No.2007-1/5
31010CB TK IM / O3103TN (KT)/71598HA (KT)/4277TA, TS