Datasheet > 2SA1419-T

2SA1419-T

更新时间： 2024-11-19 01:08:15

品牌	Logo	应用领域
科信 - KEXIN		开关晶体管
页数	文件大小	规格书
3页	1609K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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2SA1419-T 数据手册

SMD Type

Transistors

PNP Transistors

2SA1419

1.70 0.1

Features

Adoption of FBET, MBIT Processes

High Breakdown Voltage and Large Current Capacity

● Complementary to 2SC3649

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-180

-160

-6

Collector Current - Continuous

Collector Current - Pulsed

Collector Power Dissipation

Junction Temperature

-1.5

℃

-2.5

500

150

Storage Temperature range

Tstg

-55 to 150

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Min

-180

-160

-6

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -100 μA， I

Ic= -1 mA， RBE=∞

= -100μA， I =0

CB= -120 V , I =0

EB= -4V , I =0

E=0

CBO

EBO

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=-500mA, I

=- 25mA

-0.2

-0.5

=-500mA, I

-0.85 -1.2

400

CE= -5V, I

= -100mA

= -10mA

100

DC current gain

hFE

Turn-on time

700

See Test Circuit.

Storage time

Fall time

Output capacitance

Transition frequency

CB= -10V, I

CE= -10V, I

= 0,f=1MHz

= -50mA

120

MHz

■ Classification of hfe

Type

Range

Marking

2SA1419-R

100-200

AER*

2SA1419-S

140-280

AES*

2SA1419-T

200-400

AET*

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