Datasheet > 2SA1426_09

2SA1426_09

更新时间： 2024-09-18 07:29:39

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
4页	134K
描述
Audio Power Amplifier Applications

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中文翻译

获取价格

数据手册

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2SA1426_09 数据手册

2SA1426

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1426

Audio Power Amplifier Applications

Unit: mm

•

High h : h

= 100 to 320

FE FE

1-W output applications

Complementary to 2SC3666.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−35

−30

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−800

−160

1000

150

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

JEDEC

JEITA

―

stg

−55 to 150

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

TOSHIBA

2-7D101A

Weight: 0.2 g (typ.)

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-12-21

12 3 4

中文翻译

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2SA1426-Y	TOSHIBA	获取价格	TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General Pu
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2SA1428_09	TOSHIBA	获取价格	Power Amplifier Applications Power Switching Applications
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2SA1428-O	TOSHIBA	获取价格	TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General P