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2SA1429-Y PDF预览

2SA1429-Y

更新时间: 2024-02-23 12:37:40
品牌 Logo 应用领域
东芝 - TOSHIBA 开关晶体管
页数 文件大小 规格书
5页 167K
描述
TRANSISTOR 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General Purpose Small Signal

2SA1429-Y 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.79
最大集电极电流 (IC):2 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):80 MHzVCEsat-Max:0.5 V
Base Number Matches:1

2SA1429-Y 数据手册

 浏览型号2SA1429-Y的Datasheet PDF文件第2页浏览型号2SA1429-Y的Datasheet PDF文件第3页浏览型号2SA1429-Y的Datasheet PDF文件第4页浏览型号2SA1429-Y的Datasheet PDF文件第5页 
2SA1429  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
2SA1429  
Power Amplifier Applications  
Power Switching Applications  
Unit: mm  
Low collector saturation voltage: V  
= 0.5 V (max) (I = 1 A)  
CE (sat) C  
High-speed switching: t  
= 1.0 μs (typ.)  
stg  
Complementary to 2SC3669.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
80  
80  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5  
V
I
2  
A
C
Base current  
I
1  
A
B
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
1000  
150  
mW  
°C  
°C  
JEDEC  
JEITA  
C
T
j
T
stg  
55 to 150  
TOSHIBA  
2-7D101A  
Note1: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
Weight: 0.2 g (typ.)  
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating  
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2010-03-09  

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