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2SA1428-O PDF预览

2SA1428-O

更新时间: 2024-11-18 12:58:39
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关放大器小信号双极晶体管电源开关功率放大器
页数 文件大小 规格书
5页 165K
描述
TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General Purpose Small Signal

2SA1428-O 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:2-7D101A, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.51最大集电极电流 (IC):2 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):70JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.9 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.5 VBase Number Matches:1

2SA1428-O 数据手册

 浏览型号2SA1428-O的Datasheet PDF文件第2页浏览型号2SA1428-O的Datasheet PDF文件第3页浏览型号2SA1428-O的Datasheet PDF文件第4页浏览型号2SA1428-O的Datasheet PDF文件第5页 
2SA1428  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
2SA1428  
Power Amplifier Applications  
Power Switching Applications  
Unit: mm  
Low collector-emitter saturation voltage:  
= 0.5 V (max) (I = 1 A)  
V
CE (sat)  
C
High-speed switching: t  
= 1.0 μs (typ.)  
stg  
Complementary to 2SC3668  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
5  
V
I
2  
A
C
Base current  
I
0.2  
A
B
JEDEC  
JEITA  
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
1000  
150  
mW  
°C  
°C  
C
T
j
TOSHIBA  
2-7D101A  
T
stg  
55 to 150  
Weight: 0.2 g (typ.)  
Note1: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2009-12-21  

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