Datasheet > 2SA1425-Y(TPF2,F)

2SA1425-Y(TPF2,F)

更新时间： 2024-11-21 14:39:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	130K
描述
TRANSISTOR,BJT,PNP,120V V(BR)CEO,800MA I(C),SC-71

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2SA1425-Y(TPF2,F) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	最大集电极电流 (IC)：	0.8 A
配置：	Single	最小直流电流增益 (hFE)：	120
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	1 W	子类别：	Other Transistors
表面贴装：	NO	Base Number Matches：	1

2SA1425-Y(TPF2,F) 数据手册

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2SA1425

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1425

Power Amplifier Applications

Unit: mm

Driver-Stage Amplifier Applications

•

Complementary to 2SC3665.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−120

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−800

−80

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

1000

150

JEDEC

JEITA

―

stg

−55 to 150

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-7D101A

Weight: 0.2 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2010-03-10

12 3 4

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