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2SA1419_12 PDF预览

2SA1419_12

更新时间: 2024-11-18 12:51:11
品牌 Logo 应用领域
三洋 - SANYO 开关高压
页数 文件大小 规格书
7页 457K
描述
High-Voltage Switching Applications

2SA1419_12 数据手册

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Ordering number : EN2007C  
SANYO Sem iconductors  
DATA S HEET  
PNP / NPN Epitaxial Planar Silicon Transistor  
High-Voltage Switching  
Applications  
2SA1419/2SC3649  
Features  
Adoption of FBET, MBIT processes  
High breakdown voltage and large current capacity  
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s  
( ) : 2SA1419  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
(--)180  
(--)160  
(--)6  
CBO  
V
V
CEO  
V
V
EBO  
I
C
(--)1.5  
(--)2.5  
500  
A
Collector Current (Pulse)  
I
A
CP  
mW  
W
Collector Dissipation  
P
C
When mounted on ceramic substrate (250mm2 0.8mm)  
1.5  
×
Junction Temperature  
Storage Temperature  
Tj  
150  
C
C
°
Tstg  
--55 to +150  
°
Package Dimensions  
Product & Package Information  
unit : mm (typ)  
• Package  
: PCP  
7007B-004  
• JEITA, JEDEC  
: SC-62, SOT-89, TO-243  
Minimum Packing Quantity : 1,000 pcs./reel  
Top View  
2SA1419S-TD-E  
2SA1419S-TD-H  
2SA1419T-TD-E  
2SA1419T-TD-H  
2SC3649S-TD-E  
2SC3649S-TD-H  
2SC3649T-TD-E  
2SC3649T-TD-H  
4.5  
1.6  
Packing Type: TD  
1.5  
TD  
1
2
3
Marking  
0.4  
0.5  
0.4  
1.5  
3.0  
RANK  
RANK  
2SA1419  
2SC3649  
0.75  
Electrical Connection  
2
2
1 : Base  
2 : Collector  
3 : Emitter  
1
1
3
3
Bottom View  
SANYO : PCP  
2SA1419  
2SC3649  
http://www.sanyosemi.com/en/network/  
82212 TKIM/31010CB TKIM/O3103TN (KT)/71598HA (KT)/4277TA, TS  
No.2007-1/7  

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