2SA1381

更新时间： 2024-11-18 04:25:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
6页	169K
描述
PNP Epitaxial Silicon Transistor

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替代型号

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2SA1381 数据手册

March 2008

2SA1381/KSA1381

PNP Epitaxial Silicon Transistor

Applications

•

Audio, Voltage Amplifier and Current Source

CRT Display, Video Output

General Purpose Amplifier

Features

•

High Voltage : V_CEO= -300V

Low Reverse Transfer Capacitance : C_re= 2.3pF at V_CB= -30V

Excellent Gain Linearity for low THD

High Frequency: 150MHz

Full thermal and electrical Spice models are available

Complement to 2SC3503/KSC3503

TO-126

1. Emitter 2.Collector 3.Base

Absolute Maximum Ratings*

T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

-300

Units

BV_CBO

BV_CEO

BV_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulse)

-300

-5

-100

I_CP

-200

P_C

Total Device Dissipation, T_C=25°C

T_C=125°C

1.2

T_J, T_STG

Junction and Storage Temperature

- 55 ~ +150

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* T =25°C unless otherwise noted

Symbol

Parameter

Max.

Units

R_θJC

Thermal Resistance, Junction to Case

17.8

°C/W

* Device mounted on minimum pad size

Classification

h_FE

40 ~ 80

60 ~ 120

100 ~ 200

160 ~ 320

2SA1381/KSA1381 Rev. A1

www.fairchildsemi.com

12 3 4 5 6

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2SA1381 替代型号

型号	品牌	替代类型	描述	数据表
2SA1381CSTU	FAIRCHILD	功能相似	PNP Epitaxial Silicon Transistor

与2SA1381相关器件

型号	品牌	获取价格	描述	数据表
2SA1381C	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 300V V(BR)CEO \| 100MA I(C) \| TO-126
2SA1381C-RA	ONSEMI	获取价格	Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast
2SA1381CSTU	FAIRCHILD	获取价格	PNP Epitaxial Silicon Transistor
2SA1381C-YA	ONSEMI	获取价格	Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast
2SA1381D	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 300V V(BR)CEO \| 100MA I(C) \| TO-126
2SA1381D-RA	ONSEMI	获取价格	Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast
2SA1381D-SA	ONSEMI	获取价格	Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast
2SA1381DSTU	FAIRCHILD	获取价格	PNP Epitaxial Silicon Transistor
2SA1381D-YA	ONSEMI	获取价格	Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast
2SA1381E	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 300V V(BR)CEO \| 100MA I(C) \| TO-126