Datasheet > 2SA0914|2SA914

2SA0914|2SA914

更新时间： 2024-11-06 23:19:55

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其他 - ETC		晶体晶体管
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描述
Power Device - Power Transistors - Others

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2SA0914|2SA914 数据手册

Power Transistors

2SA0914 (2SA914)

Silicon PNP epitaxial planar type

Unit: mm

+0.5

–0.1

8.0

3.2 0.2

For audio system/pli drive

φ 3.16 ^0.1

Complementary to 2SC1953

■ Features

• A complementary pair with 2SC1953, is optimum for the pre-

driver stage of a 60 W to 100 W output amplifier

• TO-126B package which requires no insulation plate for instal-

lation to the heat sink

■ Absolute Maximum Ratings T_C= 25°C

0.75 0.1

4.6 0.2

0.5 0.1

2.3 0.2

Parameter

Symbol

Rating

−150

Unit

0.5 0.1

1.76 0.1

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

1: Emitter

2: Collector

3: Base

−150

−5

TO-126B-A1 Package

Collector current

I_C

I_CP

P_C

T_j

−50

Peak collector current

−100

1.2

Collector power dissipation

Junction temperature

Storage temperature

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CEO

V_EBO

I_CBO

Conditions

Min

−150

−5

Typ

Max

Unit

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Forward current transfer ratio ^*

Collector-emitter saturation voltage

Transition frequency

I_C= −100 µA, I_B= 0

I_E= −10 µA, I_C= 0

V_CB= −100 V, I_E= 0

V_CE= −5 V, I_C= −10 mA

−1

330

−1

µA



h_FE

130

V_CE(sat)I_C= −30 mA, I_B= −3 mA

f_T

V_CB= −10 V, I_E= 10 mA, f = 200 MHz

V_CB= −6 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE

130 to 220

185 to 330

Note) The part number in the parenthesis shows conventional part number.

Publication date: December 2003

SJD00005CED

12 3

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