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2SA0921S PDF预览

2SA0921S

更新时间: 2024-11-08 23:19:55
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 64K
描述
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | TO-92

2SA0921S 数据手册

 浏览型号2SA0921S的Datasheet PDF文件第2页浏览型号2SA0921S的Datasheet PDF文件第3页 
Transistor  
2SA0921 (2SA921)  
Silicon PNP epitaxial planer type  
For high breakdown voltage low-noise amplification  
Complementary to 2SC1980  
Unit: mm  
4.0 0.2  
5.0 0.2  
Features  
High collector to emitter voltage VCEO  
Low noise voltage NV.  
I
G
.
G
Absolute Maximum Ratings (Ta=25˚C)  
I
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICP  
Ratings  
–120  
–120  
–5  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Peak collector current  
Collector current  
0.45+00..12  
0.45+00..12  
V
1.27  
1.27  
V
–50  
mA  
mA  
mW  
˚C  
IC  
–20  
1 2 3  
1:Emitter  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
250  
2:Collector  
3:Base  
JEDEC:TO–92  
EIAJ:SC–43A  
2.54 0.15  
Tj  
150  
Tstg  
–55 ~ +150  
˚C  
Electrical Characteristics (Ta=25˚C)  
I
Parameter  
Symbol  
ICBO  
Conditions  
min  
typ  
max  
Unit  
nA  
µA  
V
VCB = –50V, IE = 0  
–100  
–1  
Collector cutoff current  
ICEO  
VCE = –50V, IB = 0  
IC = –10µA, IE = 0  
IC = –1mA, IB = 0  
IE = –10µA, IC = 0  
VCE = –5V, IC = –2mA  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
VCBO  
VCEO  
VEBO  
–120  
–120  
–5  
V
V
*
Forward current transfer ratio  
hFE  
180  
520  
Collector to emitter saturation voltage VCE(sat)  
IC = –20mA, IB = –2mA  
– 0.6  
V
Transition frequency  
fT  
VCB = –5V, IE = 2mA, f = 200MHz  
VCE = –40V, IC = –1mA, GV = 80dB  
Rg = 100k, Function FLAT  
200  
MHz  
Noise voltage  
NV  
150  
mV  
*hFE Rank classification  
Rank  
hFE  
R
S
180 ~ 360  
260 ~ 520  
Note.) The Part number in the Parenthesis shows conventional part number.  
1

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