生命周期: | Obsolete | 包装说明: | TO-220, 3 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.75 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 200 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 功耗环境最大值: | 25 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 80 MHz | VCEsat-Max: | 1 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1006AR | ISC |
获取价格 |
Transistor | |
2SA1006AR | NEC |
获取价格 |
1.5A, 200V, PNP, Si, POWER TRANSISTOR, TO-220, 3 PIN | |
2SA1006B | ISC |
获取价格 |
Silicon PNP Power Transistors | |
2SA1006B | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2SA1006B | NEC |
获取价格 |
PNP/NPN SILICON EPITAXIAL TRANSISTOR | |
2SA1006BP | NEC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy | |
2SA1006BQ | NEC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy | |
2SA1006BQ | ISC |
获取价格 |
Transistor | |
2SA1006BR | ISC |
获取价格 |
Transistor | |
2SA1006BR | NEC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy |