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2SA0838|2SA838 PDF预览

2SA0838|2SA838

更新时间: 2024-11-06 23:19:55
品牌 Logo 应用领域
其他 - ETC 晶体放大器晶体管信号器
页数 文件大小 规格书
3页 81K
描述
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others

2SA0838|2SA838 数据手册

 浏览型号2SA0838|2SA838的Datasheet PDF文件第2页浏览型号2SA0838|2SA838的Datasheet PDF文件第3页 
Transistors  
2SA0838 (2SA838)  
Silicon PNP epitaxial planar type  
For low-frequency amplification  
Complementary to 2SC1359  
Unit: mm  
5.0 0.2  
4.0 0.2  
Features  
High transfer ratio fT  
0.7 0.1  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
30  
Unit  
V
+0.15  
+0.15  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
0.45  
0.45  
–0.1  
–0.1  
+0.6  
+0.6  
2.5  
–0.2  
2.5  
–0.2  
20  
V
5  
V
1
2
3
30  
mA  
mW  
°C  
°C  
1 : Emitter  
2 : Collector  
3 : Base  
Collector power dissipation  
Junction temperature  
PC  
250  
Tj  
150  
TO-92-B1 Package  
Storage temperature  
Tstg  
55 to +150  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VBE  
Conditions  
VCE = −10 V, IC = −1 mA  
VCB = −10 V, IE = 0  
Min  
Typ  
Max  
Unit  
V
Base-emitter saturation voltage  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio *  
Collector-emitter saturation voltage  
Transition frequency  
0.7  
ICBO  
ICEO  
0.1  
100  
10  
µA  
µA  
µA  
VCE = −20 V, IB = 0  
IEBO  
VEB = −5 V, IC = 0  
hFE  
VCE = 10 V, IC = 1 mA  
70  
220  
VCE(sat) IC = −10 mA, IB = −1 mA  
0.1  
300  
2.8  
V
fT  
VCB = −10 V, IE = 1 mA, f = 200 MHz  
VCB = −10 V, IE = 1 mA, f = 5 MHz  
VCE = −10 V, IC = −1 mA, f = 2 MHz  
VCE = −10 V, IC = −1 mA, f = 10.7 MHz  
150  
MHz  
dB  
Noise figure  
NF  
Zrb  
Cre  
4.0  
50  
Reverse transfer impedance  
22  
Reverse transfer capacitance  
(Common-emitter)  
1.2  
2.0  
pF  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
B
C
hFE  
70 to 140  
110 to 220  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: March 2003  
SJC00005BED  
1

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