Datasheet > 2SA0885|2SA885

2SA0885|2SA885

更新时间： 2022-01-18 16:06:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	94K
描述
Power Device - Power Transistors - Others

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2SA0885|2SA885 数据手册

Power Transistors

2SA0885 (2SA885)

Silicon PNP epitaxial planar type

Unit: mm

+0.5

–0.1

8.0

3.2 0.2

For low-frequency power amplification

Complementary to 2SC1846

φ 3.16 ^0.1

■ Features

• Output of 3 W can be obtained by a complementary pair with

2SC1846

• TO-126B package which requires no insulation plate for installa-

tion to the heat sink

■ Absolute Maximum Ratings T_a= 25°C

0.75 0.1

4.6 0.2

0.5 0.1

2.3 0.2

Parameter

Symbol

Rating

−45

−35

−5

Unit

0.5 0.1

1.76 0.1

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

1: Emitter

2: Collector

3: Base

TO-126B-A1 Package

Collector current

I_C

I_CP

P_C

−1

Peak collector current

Collector power dissipation

−1.5

1.2

5.0

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

Note) : With a 100 × 100 × 2 mm Al heat sink

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

V_CBO

V_CEO

I_CBO

Conditions

Min

−45

−35

Typ

Max

Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

I_C= −10 µA, I_E= 0

I_C= −2 mA, I_B= 0

V_CB= −20 V, I_E= 0

V_CE= −20 V, I_B= 0

V_EB= −5 V, I_C= 0

− 0.1

−100

−10

µA



I_CEO

I_EBO

h_FE1

V_CE= −10 V, I_C= −500 mA

V_CE= −5 V, I_C= −1 A

340

h_FE2



Collector-emitter saturation voltage

Transition frequency

V_CE(sat)I_C= −500 mA, I_B= −50 mA

− 0.5

f_T

V_CE= −10 V, I_E= 50 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

200

MHz

Collector output capacitance

C_ob

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE1

85 to 170

120 to 240

170 to 340

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2003

SJD00002BED

12 3 4

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