Datasheet > 2SA0886(2SA886)

2SA0886(2SA886)

更新时间： 2022-01-19 20:54:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	66K
描述
2SA0886 (2SA886) - PNP Transistor

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2SA0886(2SA886) 数据手册

Power Transistors

2SA0886 (2SA886)

Silicon PNP epitaxial planar type

Unit: mm

+0.5

–0.1

For low-frequency power amplification

Complementary to 2SC1847

8.0

3.2 0.2

φ 3.16 0.1

I Features

•

Output of 4 W can be obtained by a complementary pair with

2SC1847

•

TO-126B package which requires no insulation plate for installa-

tion to the heat sink

I Absolute Maximum Ratings T_C= 25°C

0.75 0.1

4.6 0.2

0.5 0.1

2.3 0.2

0.5 0.1

1.76 0.1

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Rating

−50

−40

−5

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

1: Emitter

2: Collector

3: Base

TO-126B Package

−3

I_C

−1.5

Collector power dissipation

P_C

1.2 ^*

5 ^*

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

Note) 1: Without heat sink

2: With a 100 × 100 × 2 mm A1 heat sink

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

I_CBO

Conditions

Min

Typ

Max

−1

Unit

µA

Collector cutoff current

V_CB= −20 V, I_E= 0

V_CE= −10 V, I_B= 0

V_EB= −5 V, I_C= 0

I_CEO

−100

−10

Emitter cutoff current

I_EBO

Collector to base voltage

V_CBO

V_CEO

h_FE

I_C= −1 mA, I_E= 0

−50

−40

Collector to emitter voltage

Forward current transfer ratio ^*

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

I_C= −2 mA, I_B= 0

V_CE= −5 V, I_C= −1 A

I_C= −1.5 A, I_B= − 0.15 A

I_C= −2 A, I_B= − 0.2 A

220

−1.0

−1.5

V_CE(sat)

V_BE(sat)

f_T

V_CB= −5 V, I_E= 0.5 A, f = 200 MHz

V_CB= −20 V, I_E= 0, f = 1 MHz

150

MHz

Collector output capacitance

C_ob

Note) : Rank classification

Rank

h_FE

80 to 160

120 to 220

Note.) The Part number in the Parenthesis shows conventional part number.

12 3 4

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