Datasheet > 2PD2150

2PD2150

更新时间： 2024-10-15 11:11:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	745K
描述
20 V, 3 A NPN low VCEsat (BISS) transistorProduction

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中文翻译

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技术参数
数据手册

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2PD2150 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.72
Is Samacsys：	N	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

2PD2150 数据手册

2PD2150

20 V, 3 A NPN low V_CEsat(BISS) transistor

Rev. 02 — 2 January 2007

Product data sheet

1. Product proﬁle

1.1 General description

NPN low V_CEsatBreakthrough In Small Signal (BISS) transistor in a medium power

SOT89 (SC-62/TO-243) ﬂat lead Surface-Mounted Device (SMD) plastic package.

PNP complement: 2PB1424.

1.2 Features

I Low collector-emitter saturation voltage V_CEsat

I High collector current capability I_Cand I_CM

I High collector current gain (h_FE) at high I_C

I High efﬁciency due to less heat generation

I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

I DC-to-DC conversion

I MOSFET gate driving

I Motor control

I Charging circuits

I Power switches (e.g. motors, fans)

I Thin Film Transistor (TFT) backlight inverter

1.4 Quick reference data

Table 1.

Symbol Parameter

V_CEOcollector-emitter voltage

I_C

Quick reference data

Conditions

Min

Typ

Max

Unit

open base

collector current

I_CM

peak collector current

single pulse;

t_p≤ 1 ms

[1]

V_CEsat

collector-emitter

I_C= 2 A; I_B= 0.1 A

0.2

0.5

saturation voltage

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

12 3 4 5 6 7...13

中文翻译

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