Datasheet > 2PD601A

2PD601A

更新时间： 2024-11-15 05:56:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
2页	40K
描述
NPN General Purpose Transistor

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中文翻译

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数据手册

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2PD601A 数据手册

SMD Type

TransistIoCrs

NPN General Purpose Transistor

2PD601A

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Low current (max. 100 mA)

Low voltage (max. 50 V).

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

100

Peak collector current

I^CM

200

Peak base current

I^BM

100

P^tot

250

Total power dissipation Tamb 25 ; *

Storage temperature

T^stg

-65 to +150

150

Junction temperature

Operating ambient temperature

Thermal resistance from junction to ambient *

* Transistor mounted on an FR4 printed-circuit board.

Tamb

Rth j-a

-65 to +150

500

K/W

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