Datasheet > 2PB709AW

2PB709AW

更新时间： 2024-11-30 06:23:39

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	48K
描述
PNP General Purpose Transistor

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中文翻译

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数据手册

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2PB709AW 数据手册

SMD Type

TransistIoCrs

PNP General Purpose Transistor

2PB709AW

Features

High collector current (max. 100 mA).

Low collector-emitter saturation voltage (max. 500 mV).

1 Emitter

2 Base

3 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

-45

Unit

V^CBO

V^CEO

V^EBO

I^C

Collector-emitter voltage

Emitter-base voltage

-45

-6

Collector current

-100

Peak collector current

I^CM

-200

Total power dissipation

Storage temperature

P^tot

200

T^stg

-65 to +150

150

Junction temperature

Operating ambient temperature

Thermal resistance from junction to ambient

Tamb

Rth j-a

-65 to +150

625

K/W

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

-10

-5

Unit

Collector cut-off current

I^CBO

I^EBO

h^FE

IE = 0; VCB = -45 V

ìA

I^E= 0; VCB = -45 V; Tj = 150

IC = 0; VEB = -5 V

Emitter cut-off current

-10

DC current gain

2PB709AQW

2PB709ARW

2PB709ASW

160

210

290

260

340

460

IC = -2 mA; VCE = -10 V

Collector-emitter saturation voltage

Collector capacitance

V^CE(sat)IC = -100 mA; IB = -10 mA; *

-500

C^c

IE = ie = 0; VCB = -10 V; f = 1 MHz

Transition frequency

2PB709AQW

f^T

IC = -1 mA; VCE = -10 V;f = 100 MHz

MHz

2PB709ARW

2PB709ASW

* Pulse test: tp

300 ìs; ä 0.02.

hFE Classification

TYPE

2PB709AQW

2PB709ARW 2PB709ASW

Marking

www.kexin.com.cn

中文翻译

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