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2PB710ARL,235 PDF预览

2PB710ARL,235

更新时间: 2024-11-30 14:46:19
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
9页 49K
描述
2PB710ARL; 2PB710ASL - 50 V, 500 mA PNP general-purpose transistors TO-236 3-Pin

2PB710ARL,235 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-236包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.77
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

2PB710ARL,235 数据手册

 浏览型号2PB710ARL,235的Datasheet PDF文件第2页浏览型号2PB710ARL,235的Datasheet PDF文件第3页浏览型号2PB710ARL,235的Datasheet PDF文件第4页浏览型号2PB710ARL,235的Datasheet PDF文件第5页浏览型号2PB710ARL,235的Datasheet PDF文件第6页浏览型号2PB710ARL,235的Datasheet PDF文件第7页 
2PB710ARL; 2PB710ASL  
50 V, 500 mA PNP general-purpose transistors  
Rev. 01 — 29 October 2008  
Product data sheet  
1. Product profile  
1.1 General description  
PNP general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted  
Device (SMD) plastic package.  
Table 1.  
Product overview  
Type number[1]  
Package  
NXP  
NPN complement  
JEDEC  
2PB710ARL  
SOT23  
TO-236AB  
2PD602ARL  
2PB710ASL  
2PD602ASL  
2PB710ARL/DG  
2PB710ASL/DG  
SOT23  
TO-236AB  
2PD602ARL/DG  
2PD602ASL/DG  
[1] /DG: halogen-free  
1.2 Features  
I General-purpose transistors  
I Two current gain selections  
I AEC-Q101 qualified  
I Small SMD plastic package  
1.3 Applications  
I General-purpose switching and amplification  
1.4 Quick reference data  
Table 2.  
Symbol  
VCEO  
IC  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
50  
collector-emitter voltage  
collector current  
open base  
-
-
-
-
V
500 mA  
[1]  
hFE  
DC current gain  
VCE = 10 V;  
IC = 150 mA  
hFE group R  
hFE group S  
120  
170  
-
-
240  
340  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  
 
 
 
 
 
 
 

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TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | TO-236VAR