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2N7224 PDF预览

2N7224

更新时间: 2024-11-21 07:29:15
品牌 Logo 应用领域
SENSITRON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
3页 62K
描述
HERMETIC POWER MOSFET N-CHANNEL

2N7224 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-254AA
包装说明:FLANGE MOUNT, S-XSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.09Is Samacsys:N
其他特性:AVALANCHE RATED外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):34 A最大漏极电流 (ID):34 A
最大漏源导通电阻:0.07 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-254AAJESD-30 代码:S-XSFM-P3
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
最大脉冲漏极电流 (IDM):136 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

2N7224 数据手册

 浏览型号2N7224的Datasheet PDF文件第2页浏览型号2N7224的Datasheet PDF文件第3页 
SENSITRON  
SEMICONDUCTOR  
2N7224  
TECHNICAL DATA  
DATA SHEET 161, REV -  
(see also data sheet 766)  
HERMETIC POWER MOSFET  
N-CHANNEL  
FEATURES:  
œ
œ
œ
œ
100 Volt, 0.07 Ohm MOSFET  
Isolated and Hermetically Sealed  
Simple Drive Requirements  
Repetitive Avalanche Rating  
MAXIMUM RATINGS  
ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.  
RATING  
SYMBOL  
MIN.  
-
-
TYP.  
-
-
MAX.  
UNITS  
Volts  
Amps  
GATE TO SOURCE VOLTAGE  
CONTINUOUS DRAIN CURRENT VGS=10V, TC = 25•C  
VGS=10V, TC = 100•C  
VGS  
ID  
–20  
34  
21  
IDM  
TOP/TSTG  
-
-55  
-
-
-
-
-
136  
150  
0.83  
150  
Amps  
•C  
•C/W  
Watts  
PULSED DRAIN CURRENT  
@ TC = 25•C  
OPERATING AND STORAGE TEMPERATURE  
TERMAL RESISTANCE JUNCTION TO CASE  
TOTAL DEVICE DISSIPATION @ TC = 25•C  
R
JC  
PD  
-
ELECTRICAL CHARACTERISTICS  
DRAIN TO SOURCE BREAKDOWN VOLTAGE  
BVDSS  
100  
-
-
-
-
Volts  
VGS = 0V, ID = 1.0mA  
DRAIN TO SOURCE ON STATE RESISTANCE  
W
VGS = 10V, ID = 21A  
VGS = 10V, ID = 34A  
RDS(ON)  
0.07  
0.081  
4.0  
VGS(th)  
gfs  
2.0  
9.0  
-
-
Volts  
S(1/W)  
GATE THRESHOLD VOLTAGE  
VDS = VGS, ID = 250mA  
FORWARD TRANSCONDUCTANCE  
VDS ˜ 15V, IDS = 21A  
ZERO GATE VOLTAGE DRAIN CURRENT  
VDS = 0.8xMax. Rating, VGS = 0V  
-
-
-
mA  
IDSS  
25  
250  
VDS = 0.8xMax. Rating  
VGS = 0V, TJ = 125•C  
GATE TO SOURCE LEAKAGE FORWARD  
@ RATED  
VGS  
IGSS  
-
-
-
100  
-100  
125  
22  
nA  
nC  
GATE TO SOURCE LEAKAGE REVERSE  
TOTAL GATE CHARGE  
GATE TO SOURCE CHARGE  
GATE TO DRAIN CHARGE  
TURN ON DELAY TIME  
RISE TIME  
VGS = 10 VOLTS  
50% RATED VDS  
RATED ID  
Qg  
Qgs  
Qgd  
td(ON)  
tr  
td(ON)  
tf  
50  
8
15  
-
65  
VDD = 50V  
RATED ID  
RG = 2.35W  
-
35  
nsec  
Volts  
190  
170  
130  
1.8  
TURN OFF DELAY TIME  
FALL TIME  
VSD  
-
-
-
-
DIODE FORWARD VOLTAGE  
TJ = 25•C, IS = 34A,  
VGS = 0V  
trr  
Qrr  
500  
2.9  
nsec  
mC  
DIODE REVERSE RECOVERY TIME  
REVERSE RECOVERY CHARGE  
TJ = 25•C  
If = RATED ID  
di/dt = 100A/sec  
VGS = 0 VOLTS  
VDS = 25 VOLTS  
INPUT CAPACITANCE  
OUTPUT CAPACITANCE  
REVERSE TRANSFER CAPACITANCE  
Ciss  
Coss  
Crss  
-
3700  
1100  
200  
-
pF  
f = 1 MHz  
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798  

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