生命周期: | Obsolete | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5 |
其他特性: | LOGIC LEVEL COMPATIBLE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 0.3 A |
最大漏源导通电阻: | 5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 10 pF | JEDEC-95代码: | TO-236AB |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -65 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7002_ | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
2N7002_04 | SUPERTEX |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
2N7002_07 | SUPERTEX |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
2N7002_07 | PANJIT |
获取价格 |
60V N-Channel Enhancement Mode MOSFET | |
2N7002_08 | BL Galaxy Electrical |
获取价格 |
Small Signal MOSFET Transistor | |
2N7002_09 | PANJIT |
获取价格 |
60V N-Channel Enhancement Mode MOSFET | |
2N7002_09 | WEITRON |
获取价格 |
Small Signal MOSFET | |
2N7002_10 | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
2N7002_11 | CENTRAL |
获取价格 |
SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
2N7002_11 | UTC |
获取价格 |
0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET |