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2N7002/T3 PDF预览

2N7002/T3

更新时间: 2024-02-13 05:11:14
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
13页 153K
描述
TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal

2N7002/T3 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.3 A
最大漏源导通电阻:5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):10 pFJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N7002/T3 数据手册

 浏览型号2N7002/T3的Datasheet PDF文件第4页浏览型号2N7002/T3的Datasheet PDF文件第5页浏览型号2N7002/T3的Datasheet PDF文件第6页浏览型号2N7002/T3的Datasheet PDF文件第8页浏览型号2N7002/T3的Datasheet PDF文件第9页浏览型号2N7002/T3的Datasheet PDF文件第10页 
2N7002  
NXP Semiconductors  
60 V, 300 mA N-channel Trench MOSFET  
003aab101  
003aab100  
3
10-3  
ID  
VGS(th)  
(V)  
max  
typ  
(A)  
2
1
0
10-4  
10-5  
10-6  
min  
typ  
max  
min  
-60  
0
60  
120  
180  
0
1
2
3
Tj (°C)  
VGS (V)  
Fig 9. Gate-source threshold voltage as a function of  
junction temperature  
Fig 10. Sub-threshold drain current as a function of  
gate-source voltage  
003aab356  
003aab357  
1
102  
IS  
(A)  
0.8  
0.6  
0.4  
0.2  
C
(pF)  
Ciss  
10  
Coss  
Crss  
Tj = 25 °C  
150 °C  
0
0.2  
1
10-1  
0.4  
0.6  
0.8  
1
1
10  
102  
V
SD (V)  
VDS (V)  
Fig 11. Source current as a function of source-drain  
voltage; typical values  
Fig 12. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
2N7002  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2011. All rights reserved.  
Product data sheet  
Rev. 7 — 8 September 2011  
7 of 13  

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