Datasheet > 2N7002T,215

2N7002T,215

更新时间： 2023-02-26 13:58:19

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恩智浦 - NXP		/
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描述
2N7002T - N-channel TrenchMOS logic level FET TO-236 3-Pin

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2N7002T,215 数据手册

2N7002T

Philips Semiconductors

N-channel TrenchMOS FET

6. Characteristics

Table 5:

Characteristics

T_j= 25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max Unit

Static characteristics

V_(BR)DSSdrain-source breakdown

voltage

I_D= 250 µA; V_GS= 0 V

T_j= 25 °C

T_j= −55 °C

V_GS(th)

gate-source threshold voltage

I_D= 1 mA; V_DS= V_GS; see Figure 9 and 10

T_j= 25 °C

2.5

T_j= 150 °C

0.6

T_j= −55 °C

2.75

I_DSS

drain leakage current

gate leakage current

V_DS= 48 V; V_GS= 0 V

T_j= 25 °C

0.01

µA

T_j= 150 °C

100

I_GSS

V_GS= ±15 V; V_DS= 0 V

V_GS= 10 V; I_D= 500 mA; see Figure 6 and 8

T_j= 25 °C

R_DSon

drain-source on-state

resistance

2.8

Ω

T_j= 150 °C

9.25

5.3

V_GS= 4.5 V; I_D= 75 mA; see Figure 6 and 8

3.8

Dynamic characteristics

g_fs

transfer conductance

input capacitance

output capacitance

reverse transfer capacitance

turn-on time

V_GS= 10 V; I_D= 200 mA; see Figure 11

100

300

7.5

C_iss

C_oss

C_rss

t_on

V_GS= 0 V; V_DS= 10 V; f = 1 MHz; see

Figure 12

V_DS= 50 V; R_L= 250 Ω; V_GS= 10 V;

R_G= 50 Ω; R_GS= 50 Ω

t_off

turn-off time

Source-drain diode

V_SD

t_rr

source-drain voltage

I_S= 300 mA; V_GS= 0 V; see Figure 13

0.85 1.5

reverse recovery time

recovered charge

I_S= 300 mA; dI_S/dt = −100 A/µs; V_GS= 0 V

Q_r

2N7002T_1

Product data sheet

Rev. 01 — 17 November 2005

5 of 12

1 2 3 456 7 8...12

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