Datasheet > 2N7002T_10

2N7002T_10

更新时间： 2022-09-16 16:02:07

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
3页	332K
描述
N-Channel Enhancement MOSFET

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2N7002T_10 数据手册

2N7002T

N-Channel Enhancement MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-523

FEATURES



High density cell design for low R_DS(ON)

Voltage controlled small signal switch.

Rugged and reliable.



High saturation current capability.

DEVICE MARKING：K72

Millimeter

REF.

Min.

1.50

0.75

0.60

0.23

Max.

1.70

0.95

0.80

0.33

Min.

Max.



Drain

0.30

---

0.50

1.50

1.70

0.50BSC



Gate

0.10

0.20



Source

MAXIMUM RATINGS (T_A=25℃ unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Drain-Source Voltage

V_DS

Drain Current

I_D

115

150

°C

Power Dissipation

P_D

Operating Junction Temperature Range

Operating Storage Temperature Range

T_J

150

T_STG

-55~150

°C

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

10-Jun-2010 Rev. B

Page 1 of 3

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