Datasheet > 2N7002TB

2N7002TB

更新时间： 2022-02-26 14:16:10

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	147K
描述
60V N-CHANNEL ENHANCEMENT MODE MOSFET

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2N7002TB 数据手册

2N7002TB

60V N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES

• R_DS(ON), V_GS@10V,I_DS@500mA=5Ω

• R_DS(ON), V_GS@4.5V,I_DS@50mA=7.5Ω

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for Battery Operated Systems, Solid-State

Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• Lead free in compliance with EU RoHS 2011/65/EU directive

• Green molding compound as per IEC61249 Std..

(Halogen Free)

MECHANICAL DATA

• Case: SOT-523, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.00007 ounce, 0.002 gram

• Marking: 72

Maximum Ratings and Thermal Characteristics (T_A=25^OC unless otherwise noted )

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gats-Source Voltage

Continous Drain Current

Pulsed Drain Current ⁽¹⁾

+20

115

800

=25^oC

=75^oC

150

Maximum Power Dissipation

Junction-to Ambient Thermal Resistance (PCB mounted)²

833

^oC/W

^oC

Operating Junction and Storage Temperature Range

,TSTG

-55 to 150

Note:1.Maximum DC current limited by the package

2.Surface mounted on FR4 board,t<10 sec

3.Pulse width<300us, Duty cycle<2%

May 13,2015-REV.02

PAGE . 1

12 3 4 5

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