SPICE MODEL: 2N7002V/VA
2N7002V/VA
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
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Dual N-Channel MOSFET
Low On-Resistance
SOT-563
Low Gate Threshold Voltage
Low Input Capacitance
Dim Min
Max
0.30
1.25
1.70
0.50
1.10
1.70
0.60
0.30
0.18
Typ
0.25
1.20
1.60
A
A
B
C
D
G
H
K
L
0.15
1.10
1.55
Fast Switching Speed
Low Input/Output Leakage
B
C
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 3)
0.90
1.50
0.56
0.10
0.10
1.00
1.60
0.60
0.20
0.11
D
G
SEE NOTE 1
Mechanical Data
M
K
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Case: SOT-563
M
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
H
All Dimensions in mm
L
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Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
D2
S1
G1
D2
G1
S1
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
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Marking: See Page 2
G2
S2
D1
S2
G2
D1
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
2N7002VA
(KAY Marking Code)
2N7002V
(KAS Marking Code)
@ TA = 25°C unless otherwise specified
Symbol
Maximum Ratings
Characteristic
Value
60
Units
VDSS
VDGR
V
V
Drain-Source Voltage
60
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage (Note 3)
Continuous
Pulsed
20
40
VGSS
V
ID
IDM
280
1.5
mA
A
Drain Current (Note 3)
Continuous
Pulsed
Drain Current (Note 3)
Pd
Total Power Dissipation
150
833
mW
°C/W
°C
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
-55 to +150
Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added Lead.
DS30448 Rev. 3 - 2
1 of 3
2N7002V/VA
www.diodes.com
ã Diodes Incorporated