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2N7002V-7-L PDF预览

2N7002V-7-L

更新时间: 2024-02-07 09:02:30
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管场效应晶体管
页数 文件大小 规格书
6页 252K
描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

2N7002V-7-L 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Not Recommended包装说明:PLASTIC PACKAGE-6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.17其他特性:HIGH RELIABILITY
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):0.28 A最大漏极电流 (ID):0.28 A
最大漏源导通电阻:13.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):5 pFJESD-30 代码:R-PDSO-F6
JESD-609代码:e0湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):235
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N7002V-7-L 数据手册

 浏览型号2N7002V-7-L的Datasheet PDF文件第2页浏览型号2N7002V-7-L的Datasheet PDF文件第3页浏览型号2N7002V-7-L的Datasheet PDF文件第4页浏览型号2N7002V-7-L的Datasheet PDF文件第5页浏览型号2N7002V-7-L的Datasheet PDF文件第6页 
October 2007  
2N7002V/VA  
N-Channel Enhancement Mode Field Effect Transistor  
Features  
Dual N-Channel MOSFET  
Low On-Resistance  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Ultra-Small Surface Mount Package  
Lead Free By Design/RoHS Compliant  
(Pin1)  
SOT - 563F  
Marking : AB  
Marking : AC  
Absolute Maximum Ratings *  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
VDSS  
Drain-Source Voltage  
60  
60  
V
V
VDGR  
VGSS  
Drain-Gate Voltage RGS 1.0MΩ  
Gate-Source Voltage  
Continuous  
Pulsed  
±20  
±40  
V
ID  
Drain Current  
Continuous  
Pulsed  
280  
1.5  
mA  
A
TJ , TSTG  
Junction and Storage Temperature Range  
-55 to +150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Total Device Dissipation  
Derating above TA = 25°C  
250  
2.0  
mW  
mW/°C  
RθJA  
Thermal Resistance, Junction to Ambient *  
500  
°C/W  
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,  
© 2007 Fairchild Semiconductor Corporation  
2N7002V/VA Rev. A  
www.fairchildsemi.com  
1

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