Datasheet > 2N7002W

2N7002W

更新时间： 2024-01-23 16:11:47

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
3页	333K
描述
Small Signal MOSFET

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技术参数
数据手册

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2N7002W 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002W 数据手册

2N7002W

115 mAMPS, 60VOLTS, R

=7.5

DS(on)

Elektronische Bauelemente

Small Signal MOSFET

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

N–Channel SOT–323

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

N–Channel

Drain–Source Voltage

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

Vdc

Drain Current

– Continuous T = 25°C (Note 1.)

– Continuous T = 100°C (Note 1.)

– Pulsed (Note 2.)

ā115

ā75

ā800

mAdc

Gate–Source Voltage

– Continuous

ā20

ā40

Vdc

Vpk

– Non–repetitive (t ≤ 50 µs)

GSM

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

225

1.8

mW/°C

(Note 3.) T = 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

556

300

°C/W

θJA

SOT–323

Total Device Dissipation

mW/°C

Alumina Substrate,(Note 4.) T = 25°C

Derate above 25°C

2.4

MARKING DIAGRAM

& PIN ASSIGNMENT

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

417

°C/W

°C

θJA

T , T

J stg

–ā55 to

+150

Drain

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

3. FR–5 = 1.0 x 0.75 x 0.062 in.

4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

Gate

Source

K72 , 702 = Device Code

SOT-323

Dim

Min

Max

1.800 2.200

1.150 1.350

0.800 1.000

0.300 0.400

1.200 1.400

0.000 0.100

0.100 0.250

0.350 0.500

0.590 0.720

2.000 2.400

0.280 0.420

All Dimension in mm

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2005 Rev. A

Page 1 of 3

12 3

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