Datasheet > 2N7002W_07

2N7002W_07

更新时间： 2022-09-16 16:06:43

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	162K
描述
60V N-Channel Enhancement Mode MOSFET

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2N7002W_07 数据手册

2N7002W

60V N-Channel Enhancement Mode MOSFET

FEATURES

• R_DS(ON), V_GS@10V,I_DS@500mA=5Ω

• R_DS(ON), V_GS@4.5V,I_DS@75mA=7.5Ω

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• In compliance with EU RoHS 2002/95/EC directives

MECHANICALDATA

• Case: SOT-323 Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Marking : 72W

Drain

Gate

Source

Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )

PARAMETER

Symbol

V_{D S}

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_{G S}

I_D

+20

115

800

1 )

Pulsed Drain Current

I_{D M}

T_A=25^O

T_A=75^O

200

120

Maximum Power Dissipation

P_D

^OC

Operating Junction and Storage Temperature Range

Junction-to Ambient Thermal Resistance(PCB mounted)²

T_J,T_{S T G}

R_{θ J A}

-55 to + 150

625

^OC/W

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 10 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

STAD-JUL.26.2007

PAGE . 1

12 3 4 5

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