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2N7002WT3G PDF预览

2N7002WT3G

更新时间： 2024-02-14 08:59:31
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
5页 102K
描述
310mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 419-04, SC-70, 3 PIN

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2N7002WT3G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SC-70包装说明：LEAD FREE, CASE 419-04, SC-70, 3 PIN
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.17
配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：0.31 A最大漏极电流 (ID)：0.31 A
最大漏源导通电阻：1.6 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.33 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2N7002WT3G 数据手册

 浏览型号2N7002WT3G的Datasheet PDF文件第2页浏览型号2N7002WT3G的Datasheet PDF文件第3页浏览型号2N7002WT3G的Datasheet PDF文件第4页浏览型号2N7002WT3G的Datasheet PDF文件第5页 
2N7002W, 2V7002W  
Small Signal MOSFET  
60 V, 340 mA, Single, N−Channel, SC−70  
Features  
• ESD Protected  
• Low R  
DS(on)  
http://onsemi.com  
• Small Footprint Surface Mount Package  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
Compliant  
(Note 1)  
• 2V Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
60 V  
1.6 W @ 10 V  
2.5 W @ 4.5 V  
340 mA  
Applications  
• Low Side Load Switch  
• Level Shift Circuits  
SIMPLIFIED SCHEMATIC  
• DC−DC Converter  
1
2
Gate  
• Portable Applications i.e. DSC, PDA, Cell Phone, etc.  
3
Drain  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Rating  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
Source  
V
DSS  
(Top View)  
V
GS  
20  
V
Drain Current (Note 1)  
Steady State  
I
D
mA  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Drain  
T = 25°C  
A
310  
220  
A
T = 85°C  
t < 5 s  
T = 25°C  
A
340  
240  
A
3
T = 85°C  
Power Dissipation (Note 1)  
Steady State  
P
mW  
D
280  
330  
71 MG  
SC−70/SOT−323  
CASE 419  
t < 5 s  
G
Pulsed Drain Current (t = 10 ms)  
I
1.4  
A
DM  
STYLE 8  
p
1
2
Operating Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
Gate  
Source  
J
STG  
71 = Device Code  
Source Current (Body Diode)  
I
250  
260  
mA  
S
M
= Date Code  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
°C  
G
= Pb−Free Package  
L
(Note: Microdot may be in either location)  
Gate−Source ESD Rating  
(HBM, Method 3015)  
ESD  
900  
V
ORDERING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†
Device  
Package  
Shipping  
2N7002WT1G  
SC−70  
3000/Tape & Reel  
(Pb−Free)  
THERMAL CHARACTERISTICS  
2V7002WT1G  
SC−70  
(Pb−Free)  
3000/Tape & Reel  
Characteristic  
Symbol  
Max  
Unit  
Junction−to−Ambient − Steady State  
R
450  
°C/W  
q
JA  
(Note 1)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Junction−to−Ambient − t ≤ 5 s (Note 1)  
R
375  
q
JA  
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in  
sq [1 oz] including traces)  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 5  
2N7002W/D  
 
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