2N7002W
Mosfet(N-Channel)
SOT-323
1. GATE
2. SOURCE
3. DRAIN
Features
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
Marking: K72
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol
Parameter
Drain-Source voltage
Drain Current
Value
Units
VDS
60
V
ID
115
mA
mW
℃
PD
TJ
Power Dissipation
Junction Temperature
Storage Temperature
225
150
Tstg
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
60
60
1
TYP
MAX
UNIT
VGS=0 V, ID=10 μA
Drain-Source Breakdown Voltage
V(BR)DSS
V
VGS=0 V, ID=3mA
Gate-Threshold Voltage
Gate-body Leakage
Vth(GS)
lGSS
2.5
±100
1
V
DS=VGS, ID=250 μA
VDS=0 V, VGS=±25 V
VDS=60 V, VGS=0 V
VGS=10 V, VDS=7 V
VGS=10 V, ID=500 mA
VGS=5 V, ID=50 mA
VDS=10 V, ID=200 mA
VGS=10 V, ID=500 mA
VGS=5 V, ID=50 mA
IS=115 mA, VGS=0 V
nA
μA
mA
Zero Gate Voltage Drain Current
On-state Drain Current
IDSS
ID(ON)
500
80
7.5
7.5
Drain-Source On-Resistance
Forward Trans conductance
Drain-source on-voltage
rDS(0n)
gfs
Ω
ms
V
3.75
0.375
1.2
50
VDS(on)
V
Diode Forward Voltage
Input Capacitance
VSD
Ciss
V
VDS=25V, VGS=0V, f=1MHz
pF
Output Capacitance
COSS
CrSS
25
Reverse Transfer Capacitance
5
SWITCHING TIME
td(on)
td(off)
20
40
VDD=25 V, RL=50Ω
ID=500mA,VGEN=10 V
RG=25 Ω
Turn-on Time
ns
Turn-off Time
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Revision:20170701-P1
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