Datasheet > 2N7002V_10

2N7002V_10

更新时间： 2022-05-17 14:01:26

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
6页	511K
描述
N-Channel Enhancement Mode Field Effect Transistor

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N7002V_10 数据手册

April 2010

2N7002V/VA

N-Channel Enhancement Mode Field Effect Transistor

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant

(Pin4)

SOT-563F

* Pin1 and Pin4 are exchangeable.

Marking : AB

Marking : AC

Absolute Maximum Ratings * T_A= 25°C unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Value

Units

V_DGR

Drain-Gate Voltage R_GS≤ 1.0MΩ

V_GSS

Gate-Source Voltage

Continuous

Pulsed

±20

±40

I_D

Drain Current

Continuous

Pulsed

280

1.5

T_{J ,}T_STGJunction and Storage Temperature Range

-55 to +150

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

Symbol

Parameter

Total Device Dissipation

Derating above T_A= 25°C

Value

Units

P_D

250

2.0

mW/°C

R_θJA

Thermal Resistance, Junction to Ambient *

500

°C/W

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimum land pad size.

www.fairchildsemi.com

2N7002V/VA Rev. A1

12 3 4 5 6

下载PDF

与2N7002V_10相关器件

型号	品牌	描述	获取价格	数据表
2N7002V-7	DIODES	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
2N7002V-7-L	DIODES	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
2N7002VA	DIODES	N-Channel Enhancement Mode Field Effect Transistor	获取价格
2N7002VA	ONSEMI	N 沟道增强型场效应晶体管 60V，0.28A，2Ω	获取价格
2N7002VA-7	DIODES	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
2N7002VA-7-L	DIODES	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格