Datasheet > 2N7002TB

2N7002TB

更新时间： 2022-02-26 14:16:10

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	147K
描述
60V N-CHANNEL ENHANCEMENT MODE MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N7002TB 数据手册

2N7002TB

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

BVDSS

GS=0V, I

=10μA

=250μA

=50mA

=500mA

2.5

7.5

GS(th

)

DS=VGS, I

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current

Gate Body Leakage

DS(ON)

GS=4.5V, I

GS=10V, I

μA

DSS

GSS

DS=60V,VGS=0V

GS=+20V,VDS=0V

+100

Forward Transconductance

DS=15V, I

=250mA

100

Dynamic

Total Gate Charge

0.6

0.7

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-Off Delay Time

Input Capacitance

Output Capacitance

0.1

DS=15V, I

DD=10V,R

=500mA, VGS=4.5V

0.08

=20Ω

=500mA,VGEN=10V,R =10Ω

OFF

ISS

OSS

RSS

DS=25V, V

=0V, f=1.0MHz

Reverse Transfer Capacitance

Source-Drain Diode

Max.Diode Forward Current

=250mA,VGS=0V

250

1.2

Diode Foreard Voltage

0.93

VDD

Switching

Gate Charge

Test Circuit

OUT

1mA

May 13,2015-REV.02

PAGE . 2

123 4 5

下载PDF

与2N7002TB相关器件

型号	品牌	描述	获取价格	数据表
2N7002TC	DIODES	115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	获取价格
2N7002T-C	SECOS	N-Channel Plastic- Encapsulate MOSFETS	获取价格
2N7002TG-AN3-R	UTC	300mA, 60V N-CHANNEL POWER MOSFET	获取价格
2N7002TL-AN3-R	UTC	300mA, 60V N-CHANNEL POWER MOSFET	获取价格
2N7002-TP	MCC	N-Channel MOSFET	获取价格
2N7002-TP-HF	MCC	Small Signal Field-Effect Transistor,	获取价格