是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 0.115 A | 最大漏极电流 (ID): | 0.115 A |
最大漏源导通电阻: | 13.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 5 pF | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.15 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7002-T1-E3 | VISHAY |
获取价格 |
N-Channel 60-V (D-S) MOSFET | |
2N7002-T1-GE3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
2N7002T2 | CALOGIC |
获取价格 |
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Met | |
2N7002T-7 | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
2N7002T7-7 | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Met | |
2N7002T-7-F | DIODES |
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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
2N7002TB | PANJIT |
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60V N-CHANNEL ENHANCEMENT MODE MOSFET | |
2N7002TC | DIODES |
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115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
2N7002T-C | SECOS |
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N-Channel Plastic- Encapsulate MOSFETS | |
2N7002TE | KEXIN |
获取价格 |
N-Channel MOSFET |