Datasheet > 2N7002TE

2N7002TE

更新时间： 2024-10-15 18:09:47

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描述
N-Channel MOSFET

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中文翻译

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数据手册

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2N7002TE 数据手册

SMD Type

MOSFET

N-Channel MOSFET

2N7002TE

SOT-523

Unit:mm

1.6 ⁺_-⁰₀^._.¹₁

1.0 ⁺_-⁰₀^._.¹₁

0.2_-⁺⁰₀^._.⁰₀⁵₅

0.15±0.05

■ Features

● VDS (V) = 60V

● ID = 0.29 A

● R^DS(ON)＜ 2Ω (VGS = 20V)

● RDS(ON) ＜ 7.5Ω (VGS = 5V)

0.3±0.05

+0.1

-0.1

0.5

1. Gate

2. Source

3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

Gate-Source Voltage

±20

0.29

Continuous Drain Current

Pulsed Drain Current

1.2

Power Dissipation

150

Thermal Resistance.Junction- to-Ambient

Junction Temperature

thJA

833

℃/W

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

=250μA, VGS=0V

DS=60V, VGS=0V

^DS=60V, V^GS=0V, T

^DS=0V, V^GS=±20V

500

±10

2.5

Zero Gate Voltage Drain Current

DSS

GSS

=125℃

Gate-Body Leakage Current

Gate Threshold Voltage

GS(th)

DS=VGS , I

D=250uA

^GS=20V, I

D=500mA

Static Drain-Source On-Resistance

RDS(O

^GS=5V, I

D=50mA

7.5

On-State Drain Current

Forward Transconductance

Input Capacitance

D(on)

iss

oss

rss

GS = 10 V, VDS = 7.5 V

DS=10V, I =0.2A

1.43

356.5

37.8

12.4

6.5

GS=0V, VDS=25V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-On DelayTime

d(on)

d(off)

5.85

12.5

1.2

GS=10V, VDS=30V, I

=150Ω

D=0.2A,

RGEN=25Ω,R

Turn-Off DelayTime

Diode Forward Voltage

IS=0.2A,VGS=0V

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