Datasheet > 2N7002T,215

2N7002T,215

更新时间： 2023-02-26 13:58:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	78K
描述
2N7002T - N-channel TrenchMOS logic level FET TO-236 3-Pin

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2N7002T,215 数据手册

2N7002T

Philips Semiconductors

N-channel TrenchMOS FET

5. Thermal characteristics

Table 4:

Thermal characteristics

Symbol Parameter

Conditions

Min

Typ

Max Unit

R_th(j-sp)thermal resistance from junction to solder point

see Figure 4

150

350

K/W

[1]

R_th(j-a)

thermal resistance from junction to ambient

[1] Mounted on a printed-circuit board; minimum footprint; vertical in still air

03aa01

10³

Z_th(j-sp)

(K/W)

10²

δ = 0.5

0.2

0.1

0.02

0.05

t_p

δ =

single pulse

t_p

10^-1

10^-5

10^-4

10^-3

10^-2

10^-1

t_p(s)

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

2N7002T_1

Product data sheet

Rev. 01 — 17 November 2005

4 of 12

1 2 345 6 7...12

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