Datasheet > 2N7002T_1

2N7002T_1

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
6页	341K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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2N7002T_1 数据手册

October 2007

2N7002T

N-Channel Enhancement Mode Field Effect Transistor

Features

•

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Ultra-Small Surface Mount Package

Lead Free/RoHS Compliant

SOT - 523F

Marking : AA

Absolute Maximum Ratings *

= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_DSS

Drain-Source Voltage

V_DGR

V_GSS

Drain-Gate Voltage R_GS≤ 1.0MΩ

Gate-Source Voltage

Continuous

Pulsed

±20

±40

I_D

Drain Current

Continuous

Continuous @ 100°C

Pulsed

115

800

T_J

Junction Temperature

150

°C

T_STG

Storage Temperature Range

-55 to +150

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Total Device Dissipation

Derating above TA = 25°C

200

1.6

mW/°C

R_θJA

Thermal Resistance, Junction to Ambient *

625

°C/W

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimun land pad size,

2N7002T Rev. A

www.fairchildsemi.com

12 3 4 5 6

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