Datasheet > 2N7002T,215

2N7002T,215

更新时间： 2023-02-26 13:58:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	78K
描述
2N7002T - N-channel TrenchMOS logic level FET TO-236 3-Pin

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2N7002T,215 数据手册

2N7002T

Philips Semiconductors

N-channel TrenchMOS FET

3. Ordering information

Table 2:

Ordering information

Type number

Package

Name

Description

Version

2N7002T

TO-236AB plastic surface mounted package; 3 leads

SOT23

4. Limiting values

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

V_DS

V_DGR

V_GS

V_GSM

I_D

drain-source voltage

25 °C ≤ T_j≤ 150 °C

drain-gate voltage (DC)

gate-source voltage

peak gate-source voltage

drain current

25 °C ≤ T_j≤ 150 °C; R_GS= 20 kΩ

±30

±40

300

190

1.2

t_p≤ 50 µs; pulsed; duty cycle = 25 %

T_sp= 25 °C; V_GS= 10 V; see Figure 2 and 3

T_sp= 100 °C; V_GS= 10 V; see Figure 2

T_sp= 25 °C; pulsed; t_p≤ 10 µs; see Figure 3

T_sp= 25 °C; see Figure 1

I_DM

P_tot

T_stg

T_j

peak drain current

total power dissipation

storage temperature

junction temperature

0.83

+150

−65

°C

Source-drain diode

I_S

source current

peak source current

T_sp= 25 °C

300

1.2

I_SM

T_sp= 25 °C; pulsed; t_p≤ 10 µs

2N7002T_1

Product data sheet

Rev. 01 — 17 November 2005

2 of 12

123 4 5 6 7...12

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