Datasheet > 2N7002K-AU_T1_10001

2N7002K-AU_T1_10001

更新时间： 2024-11-09 12:30:51

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	326K
描述
60V N-Channel Enhancement Mode MOSFET - ESD Protected

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2N7002K-AU_T1_10001 数据手册

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2N7002K-AU

60V N-Channel Enhancement Mode MOSFET - ESD Protected

Unit：inch(mm)

SOT-23

FEATURES

• R_DS(ON), V_GS@10V,I_DS@500mA=3Ω

• R_DS(ON), V_GS@4.5V,I_DS@200mA=4Ω

0.120(3.04)

0.110(2.80)

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• ESD Protected 2KV HBM

0.056(1.40)

0.047(1.20)

• Acqire quality system certificate : TS16949

0.008(0.20)

0.003(0.08)

0.079(2.00)

0.070(1.80)

• AEC-Q101 qualified

• Lead free in comply with EU RoHS 2002/95/EC directives.

• Green molding compound as per IEC61249 Std. . (Halogen Free)

0.044(1.10)

0.035(0.90)

0.004(0.10)

0.000(0.00)

MECHANICAL DATA

• Case: SOT-23 Package

0.020(0.50)

0.013(0.35)

• Terminals : Solderable per MIL-STD-750,Method 2026

• Apporx. Weight: 0.0003 ounces, 0.0084 grams

• Marking : K72

Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )

PARAMETER

Symbol

V_DS

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_GS

+20

300

I_D

Pulsed Drain Current

I_DM

2000

T_A=25^OC

T_A=75^OC

350

210

Maximum Power Dissipation

P_D

^OC

Operating Junction and Storage Temperature Range

Junction-to Ambient Thermal Resistance(PCB mounted)²

T_J,T_STG

-55 to + 150

357

R_θJA

^OC/W

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 5 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

October 29,2010-REV.02

PAGE . 1

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