Datasheet > 2N7002KBV

2N7002KBV

更新时间： 2024-11-21 18:10:03

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
5页	482K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 0.34 A;Total Gate Charge (nQ) typ : 30 nQ;Maximum Power Dissipation (W) : 0.35 W;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23;Certified (AEC-Q101...etc) : AEC-Q101

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数据手册

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2N7002KBV 数据手册

2N7002KBV

N-Channel Enhancement Mode Power MOSFET

General Features

V_DS= 60V,I_D= 0.34A

R_DS(ON)< 5.3Ω @ V_GS=4.5V,I^D= 200 mA

R_DS(ON)< 5.0Ω @ V_GS=10V ,I^D= 500mA

ESD Rating HBM 1000V

Schematic diagram

72K

High power and current handing capability

Lead free product is acquired

Surface mount package

Application

Direct logic-level interface: TTL/CMOS

Drivers: relays, solenoids, lamps, hammers,display,

memories, transistors, etc.

Marking and pin assignment

Battery operated systems

Solid-state relays

P/N suffix V means AEC-Q101 qualified, e.g:2N7002KBV

Halogen-free

SOT-23 top view

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Ø180mm

Tape width

Quantity

72K

2N7002KB

SOT-23

8 mm

3000 units

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

I_D

P_D

0.34

0.35

Continuous Drain Current

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2020-11/03

REV:O

12 3 4 5

中文翻译

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