Datasheet > 2N7002KDDWQ

2N7002KDDWQ

更新时间： 2024-10-15 15:19:23

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	413K
描述
SOT-363

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中文翻译

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数据手册

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2N7002KDDWQ 数据手册

RoHS

COMPLIANT

2N7002KDDWQ

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

60V

● I_D

220mA

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

＜2.5ohm

＜3.0ohm

● ESD protected up to 2.0KV (HBM)

General Description

● Trench Power MV MOSFET technology

● Voltage controlled small signal switch

● Low input Capacitance

● Fast Switching Speed

● Low Input / Output Leakage

● Part no. with suffix “Q” means AEC-Q101 qualified

Applications

● Battery operated systems

● Solid-state relays

● Direct logic-level interface：TTL/CMOS

● 12V, 24V Automotive systems

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

V_DS

Gate-source Voltage

Drain Current

V_GS

±20

220

I_D

Pulsed Drain Current ^A

I_DM

1.3

Total Power Dissipation @ T_A=25℃

P_D

250

℃/ W

℃

Thermal Resistance Junction-to-Ambient @ Steady State ^B

Junction and Storage Temperature Range

R_θJA

500

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

2N7002KDDWQ

72KD

3000

30000

120000

7“ reel

1 / 7

S-S4695

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.1,24-Nov-22

12 3 4 5 6 7

中文翻译

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2N7002KDW	SECOS	获取价格	Dual N-Channel Small Signal MOSFET
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