Datasheet > 2N7002KCT

2N7002KCT

更新时间： 2024-10-15 15:19:19

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	705K
描述
SOT-723

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中文翻译

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数据手册

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2N7002KCT 数据手册

RoHS

COMPLIANT

2N7002KCT

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

60V

0.3A

● I_D

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

＜2.5Ω

＜3Ω

● Gate-Source ESD Rating Up to 2KV (HBM)

General Description

● Trench Power MV MOSFET technology

● Voltage controlled small signal switch

● Low input Capacitance

● Fast Switching Speed

● Low Input / Output Leakage

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Battery operated systems

● Solid-state relays

● Direct logic-level interface：TTL/CMOS

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

0.3

T_A=25℃

Drain Current

I_D

0.2

T_A=100℃

Pulsed Drain Current ^A

Total Power Dissipation ^B

I_DM

0.9

0.34

T_A=25℃

P_D

℃

0.13

T_A=100℃

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

■Thermal resistance

Parameter

Symbol

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^C

Steady-State

R_θJA

300

360

℃/W

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

2N7002KCT

8000

80000

320000

7“ reel

1 / 8

S-E243

Rev.1.1,24-Oct-22

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7 8

中文翻译

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