Datasheet > 2N7002KCDW

2N7002KCDW

更新时间： 2024-11-21 17:01:03

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	631K
描述
SOT-363

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中文翻译

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数据手册

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2N7002KCDW 数据手册

RoHS

COMPLIANT

2N7002KCDW

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

60V

● I_D

300mA

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

＜2.5ohm

＜3.0ohm

● Gate-Source ESD Rating Up to 2KV (HBM)

General Description

● Trench Power MV MOSFET technology

● Voltage controlled small signal switch

● Low input Capacitance

● Fast Switching Speed

● Low Input / Output Leakage

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Battery operated systems

● Solid-state relays

● Direct logic-level interface：TTL/CMOS

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

Drain Current

V_DS

V_GS

±20

T_A=25℃ @ Steady State

T_A=70℃ @ Steady State

300

240

I_D

Pulsed Drain Current ^A

Total Power Dissipation @ T_A=25℃

I_DM

1.5

300

P_D

℃/ W

℃

Thermal Resistance Junction-to-Ambient @ Steady State ^B

Junction and Storage Temperature Range

R_θJA

416

T_J,T_STG

-55～+150

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

2N7002KCDW

72KC

3000

30000

120000

7“ reel

1 / 6

S-E113

Rev.1.2,06-Jul-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6

中文翻译

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