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2N7002DWA PDF预览

2N7002DWA

更新时间: 2022-02-26 11:15:53
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 530K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

2N7002DWA 数据手册

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NOT RECOMMENDED FOR NEW DESIGN  
USE DMN65D8LDW  
2N7002DWA  
8
7
2.5  
)
(
2.2  
6
5
4
3
2
1.9  
1.6  
I
= 1mA  
V
I
= 5.0V  
D
GS  
= 115mA  
D
I
= 250µA  
D
V
= 10V  
GS  
I
= 115mA  
D
,
1.3  
1.0  
1
0
-50 -25  
0
25  
50  
75 100 125 150  
-50 -25  
0
25  
50 75 100 125 150  
TJ, JUNCTION TEMPERATURE (C)  
TJ , JUNCTION TEMPERATURE (C)  
Figure 7 On-Resistance Variation with Temperature  
Figure 8 Gate Threshold Variation vs.Temperature  
1
1
R
DS(on)  
Limited  
)
0.1  
(
DC  
P
0.1  
= 10s  
T
= 150°C  
W
A
P
= 1s  
W
T
= 125°C  
0.01  
A
P
= 100ms  
W
,
I
P
= 10ms  
W
T
= 85°C  
A
0.01  
P
= 1ms  
W
T
= 25°C  
A
0.001  
T
= 150°C  
P
= 100µs  
W
J(max)  
T
= 25°C  
T
= -55°C  
A
A
V
= 8V  
GS  
Single Pulse  
DUT on 1 * MRP Board  
0.001  
0.1  
0.0001  
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
VSD, SOURCE-DRAIN VOLTAGE (V)  
1
10  
100  
VDS , DRAIN-SOURCE VOLTAGE (V)  
Figure 10 SOA, Safe Operation Area  
Figure 9 Diode Forward Voltage vs. Current  
5 of 7  
www.diodes.com  
March 2017  
© Diodes Incorporated  
2N7002DWA  
Document number: DS36120 Rev. 9 - 3  

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