Datasheet > 2N7002DWA

2N7002DWA

更新时间： 2022-02-26 11:15:53

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美台 - DIODES		/
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描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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2N7002DWA 数据手册

NOT RECOMMENDED FOR NEW DESIGN

USE DMN65D8LDW

2N7002DWA

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

—

1.0

±5

BV_DSS

I_DSS

V_GS= 0V, I_D= 250µA

Zero Gate Voltage Drain Current

Gate-Body Leakage

µA

V_DS= 60V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

I_GSS

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

—

0.8

—

2.5

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250µA

V_GS= 5.0V, I_D= 0.115A

V_GS= 10.0V, I_D= 0.115A

V_DS= 10V, I_D= 0.115A

V_GS= 0V, I_S= 115mA

Static Drain-Source On-Resistance

—

Forward Transconductance

Diode Forward Voltage

—

1.2

g_FS

0.8

V_SD

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

—

22.0

3.2

—

C_iss

C_oss

C_rss

R_G

Output Capacitance

V_DS= 25V, V_GS= 0V, f = 1.0MHz

V_DS= 0V, V_GS= 0V, f = 1.0MHz

Reverse Transfer Capacitance

Gate Resistance

2.0

0.87

0.43

0.11

3.3

Total Gate Charge V_GS= 10V

Total Gate Charge V_GS= 4.5V

Gate-Source Charge

Gate-Drain Charge

Q_g

V_GS= 10V, V_DS= 30V,

I_D= 150mA

Q_gs

Q_gd

t_D(ON)

t_R

Turn-On Delay Time

Turn-On Rise Time

3.2

V_DD= 30V, I_D= 0.115A, V_GEN= 10V_,

R_GEN= 25Ω

Turn-Off Delay Time

Turn-Off Fall Time

12.0

6.3

t_D(OFF)

t_F

Notes:

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

3 of 7

www.diodes.com

March 2017

2N7002DWA

Document number: DS36120 Rev. 9 - 3

1 234 5 6 7

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