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2N7002A-13

更新时间: 2024-01-15 10:51:41
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
6页 135K
描述
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

2N7002A-13 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantFactory Lead Time:18 weeks 4 days
风险等级:5.01Is Samacsys:N
其他特性:HIGH RELIABILITY配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.22 A
最大漏极电流 (ID):0.18 A最大漏源导通电阻:6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.54 W
参考标准:AEC-Q101子类别:FET General Purpose Powers
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2N7002A-13 数据手册

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2N7002A  
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Copyright © 2013, Diodes Incorporated  
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2N7002A  
Document number: DS31360 Rev. 12 - 2  

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