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2N6802 PDF预览

2N6802

更新时间: 2023-12-06 20:12:16
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 1124K
描述
500V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6802 with Hermetic Packaging

2N6802 数据手册

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IRFF430  
JANTX2N6802/JANTXV2N6802  
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)  
Symbol  
BVDSS  
Parameter  
Drain-to-Source Breakdown Voltage  
Breakdown Voltage Temp. Coefficient  
Min. Typ. Max. Units  
Test Conditions  
VGS = 0V, ID = 1.0mA  
V/°C Reference to 25°C, ID = 1.0mA  
500 ––– –––  
––– 0.43 –––  
V
BVDSS/TJ  
––– –––  
––– –––  
1.5  
1.6  
4.0  
V
GS = 10V, ID2 = 1.5A   
GS = 10V, ID1 = 2.5A   
RDS(on)  
Static Drain-to-Source On-Resistance  
  
V
VGS(th)  
Gate Threshold Voltage  
2.0  
1.5  
––– –––  
–––  
V
S
VDS = VGS, ID = 250µA  
DS = 15V, ID2 = 1.5A   
VDS = 400 V, VGS = 0V  
DS = 400V,VGS = 0V,TJ =125°C  
VGS = 20V  
GS = -20V  
Gfs  
IDSS  
Forward Transconductance  
––– –––  
25  
V
Zero Gate Voltage Drain Current  
µA  
nA  
––– ––– 250  
––– ––– 100  
––– ––– -100  
V
IGSS  
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
V
QG  
QGS  
QGD  
td(on)  
tr  
19.8 –––  
33  
ID1 = 2.5A  
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
2.2  
5.5  
––– 4.46  
––– 28.11  
nC  
ns  
VDS = 250V  
VGS = 10V  
––– –––  
––– –––  
––– –––  
––– –––  
30  
30  
55  
30  
VDD = 250V  
ID1 = 2.5A  
RG = 7.5  
td(off)  
tf  
VGS = 10V  
Measured from Drain lead (6mm / 0.25 in  
from package) to Source lead (6mm/ 0.25  
in from package) with Source wire  
internally bonded from Source pin to Drain  
pin  
Ls +LD  
Total Inductance  
–––  
7.0  
–––  
nH  
pF  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
––– 610 –––  
––– 135 –––  
–––  
VGS = 0V  
VDS = 25V  
ƒ = 1.0MHz  
65  
–––  
Source-Drain Diode Ratings and Characteristics  
Symbol  
Parameter  
Continuous Source Current (Body Diode)  
Pulsed Source Current (Body Diode)   
Diode Forward Voltage  
Min. Typ. Max. Units  
Test Conditions  
IS  
––– –––  
––– –––  
––– –––  
2.5  
10  
A
ISM  
VSD  
trr  
1.4  
V
TJ = 25°C,IS = 2.5A, VGS = 0V  
Reverse Recovery Time  
––– ––– 900  
––– ––– 7.0  
ns TJ = 25°C, IF = 2.5A, VDD 50V  
µC di/dt = 100A/µs   
Qrr  
Reverse Recovery Charge  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
ton  
Forward Turn-On Time  
Thermal Resistance  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Units  
Junction-to-Case  
–––  
–––  
5.0  
RJC  
RJA  
°C/W  
Junction-to-Ambient (Typical Socket Mount)  
–––  
–––  
175  
Footnotes:  
Repetitive Rating; Pulse width limited by maximum junction temperature.  
VDD = 50V, starting TJ = 25°C, L = 59mH, Peak IL = 2.5A, VGS = 10V, RG = 25  
ISD 2.5A, di/dt 75A/µs, VDD 500V, TJ 150°C, Suggested RG = 7.5 Ω  
Pulse width 300 µs; Duty Cycle 2%  
2
2018-11-20  
International Rectifier HiRel Products, Inc.  

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