IRFF430
JANTX2N6802/JANTXV2N6802
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BVDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
Test Conditions
VGS = 0V, ID = 1.0mA
V/°C Reference to 25°C, ID = 1.0mA
500 ––– –––
––– 0.43 –––
V
BVDSS/TJ
––– –––
––– –––
1.5
1.6
4.0
V
GS = 10V, ID2 = 1.5A
GS = 10V, ID1 = 2.5A
RDS(on)
Static Drain-to-Source On-Resistance
V
VGS(th)
Gate Threshold Voltage
2.0
1.5
––– –––
–––
V
S
VDS = VGS, ID = 250µA
DS = 15V, ID2 = 1.5A
VDS = 400 V, VGS = 0V
DS = 400V,VGS = 0V,TJ =125°C
VGS = 20V
GS = -20V
Gfs
IDSS
Forward Transconductance
––– –––
25
V
Zero Gate Voltage Drain Current
µA
nA
––– ––– 250
––– ––– 100
––– ––– -100
V
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
V
QG
QGS
QGD
td(on)
tr
19.8 –––
33
ID1 = 2.5A
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.2
5.5
––– 4.46
––– 28.11
nC
ns
VDS = 250V
VGS = 10V
––– –––
––– –––
––– –––
––– –––
30
30
55
30
VDD = 250V
ID1 = 2.5A
RG = 7.5
td(off)
tf
VGS = 10V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire
internally bonded from Source pin to Drain
pin
Ls +LD
Total Inductance
–––
7.0
–––
nH
pF
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 610 –––
––– 135 –––
–––
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
65
–––
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Min. Typ. Max. Units
Test Conditions
IS
––– –––
––– –––
––– –––
2.5
10
A
ISM
VSD
trr
1.4
V
TJ = 25°C,IS = 2.5A, VGS = 0V
Reverse Recovery Time
––– ––– 900
––– ––– 7.0
ns TJ = 25°C, IF = 2.5A, VDD ≤ 50V
µC di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ton
Forward Turn-On Time
Thermal Resistance
Symbol
Parameter
Min.
Typ.
Max.
Units
Junction-to-Case
–––
–––
5.0
RJC
RJA
°C/W
Junction-to-Ambient (Typical Socket Mount)
–––
–––
175
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L = 59mH, Peak IL = 2.5A, VGS = 10V, RG = 25 Ω
ISD 2.5A, di/dt 75A/µs, VDD 500V, TJ 150°C, Suggested RG = 7.5 Ω
Pulse width 300 µs; Duty Cycle 2%
2
2018-11-20
International Rectifier HiRel Products, Inc.