Datasheet > 2N6802

2N6802

更新时间： 2023-12-06 20:12:16

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	1124K
描述
500V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6802 with Hermetic Packaging

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2N6802 数据手册

IRFF430

JANTX2N6802/JANTXV2N6802

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Symbol

BV_DSS

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Min. Typ. Max. Units

Test Conditions

V_GS= 0V, I_D= 1.0mA

V/°C Reference to 25°C, I_D= 1.0mA

500 ––– –––

––– 0.43 –––

BV_DSS/T_J

––– –––

1.5

1.6

4.0

_GS= 10V, I_D2= 1.5A 

_GS= 10V, I_D1= 2.5A 

R_DS(on)

Static Drain-to-Source On-Resistance



V_GS(th)

Gate Threshold Voltage

2.0

1.5

––– –––

–––

V_DS= V_GS, I_D= 250µA

_DS= 15V, I_D2= 1.5A 

V_DS= 400 V, V_GS= 0V

_DS= 400V,V_GS= 0V,T_J=125°C

V_GS= 20V

_GS= -20V

Gfs

I_DSS

Forward Transconductance

––– –––

Zero Gate Voltage Drain Current

µA

––– ––– 250

––– ––– 100

––– ––– -100

I_GSS

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Q_G

Q_GS

Q_GD

t_d(on)

19.8 –––

I_D1= 2.5A

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

2.2

5.5

––– 4.46

––– 28.11

V_DS= 250V

V_GS= 10V

––– –––

V_DD= 250V

I_D1= 2.5A

R_G= 7.5

t_d(off)

t_f

V_GS= 10V

Measured from Drain lead (6mm / 0.25 in

from package) to Source lead (6mm/ 0.25

in from package) with Source wire

internally bonded from Source pin to Drain

Ls +L_D

Total Inductance

–––

7.0

–––

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

––– 610 –––

––– 135 –––

–––

V_GS= 0V

V_DS= 25V

ƒ = 1.0MHz

–––

Source-Drain Diode Ratings and Characteristics

Symbol

Parameter

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode) 

Diode Forward Voltage

Min. Typ. Max. Units

Test Conditions

I_S

––– –––

2.5

I_SM

V_SD

t_rr

1.4

T_J= 25°C,I_S= 2.5A, V_GS= 0V

Reverse Recovery Time

––– ––– 900

––– ––– 7.0

ns T_J= 25°C, I_F= 2.5A, V_DD≤ 50V

µC di/dt = 100A/µs 

Q_rr

Reverse Recovery Charge

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

t_on

Forward Turn-On Time

Thermal Resistance

Symbol

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

–––

5.0

R_JC

R_JA

°C/W

Junction-to-Ambient (Typical Socket Mount)

–––

175

Footnotes:

Repetitive Rating; Pulse width limited by maximum junction temperature.

V_DD= 50V, starting T_J= 25°C, L = 59mH, Peak I_L= 2.5A, V_GS= 10V, R_G= 25 Ω

 I_SD 2.5A, di/dt  75A/µs, V_DD 500V, T_J 150°C, Suggested R_G= 7.5 Ω

 Pulse width  300 µs; Duty Cycle  2%

2018-11-20

International Rectifier HiRel Products, Inc.

123 4 5 6 7

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